Reactive ion etching


  • Dry etching process
  • Isotropic and anisotropic etching available
  • Primarily applicated in semiconductor industry

Structuring for micro- and nanosystem technology

Reactive Ion Etching (RIE) is a dry etching process that combines chemical and physical processes: The impact of ions in a sputtering process activates the substrate surface and supplies the energy necessary to allow a chemical reaction with the etching gas. FHR has many years of experience using this structuring process.  

The etching gas and the surface material form a volatile reaction product in the process, which is removed via the vacuum system. This etching method is very attractive because the etching behavior can be controlled well: The process provides excellent control of uniformity, etching profiles, etching rates and selectivity, and both isotropic, i.e. direction-independent, as well as anisotropic, directed etching can be achieved.  

When combined with special masks, reactive ion etching is the method of choice for generating structures for micro- and nano-system technology. Reactive ion etching is primarily used as a micro-structuring process in the semiconductor industry.  

FHR offers systems that are suitable for processing substrates with a large surface area (the FHR.Line seires) and as a component of cluster tools for processing wafers (the FHR.Star series). 

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